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MRF183R1 Datasheet, PDF (2/12 Pages) Motorola, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 mAdc)
BVDSS
65
-
-
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
-
-
1
Gate - Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
-
-
1
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mAdc)
VGS(Q)
3
-
5
Drain- Source On - Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
-
0.7
-
Forward Transconductance
(VDS = 10 Vdc, ID = 5 Adc)
gfs
-
2
-
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
-
82
-
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
-
38
-
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
-
4.5
-
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
(VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 945.0, f2 = 945.1 MHz, IDQ = 250 mA)
Two - Tone Common Source Amplifier Power Gain
Gps
11.5
13.5
-
Two - Tone Drain Efficiency
η
33
38
-
3rd Order Intermodulation Distortion
IMD
-
- 32
- 28
Input Return Loss
IRL
9
14
-
(VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 930.0, f2 = 930.1 MHz, and f1 = 960.0, f2 = 960.1 MHz, IDQ = 250 mA)
Two - Tone Common Source Amplifier Power Gain
Gps
-
13
-
Two - Tone Drain Efficiency
η
-
35
-
3rd Order Intermodulation Distortion
IMD
-
- 32
-
Input Return Loss
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 45 Watts CW, IDQ = 250 mA,
f = 945 MHz, VSWR 5:1 at All Phase Angles)
IRL
-
12
-
Ψ
No Degradation in Output Power
Before and After Test
Unit
Vdc
µAdc
µAdc
Vdc
Vdc
S
pF
pF
pF
dB
%
dBc
dB
dB
%
dBc
dB
MRF183R1 MRF183LSR1
2
MOTOROLA RF DEVICE DATA
Archived 2005
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