MRF183R1 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF183/D
The RF MOSFET Line
RF Power
Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in 28
volt base station equipment.
• Guaranteed Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 11.5 dB
Efficiency — 33%
IMD — - 28 dBc
D
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal
Impedance Parameters
• S - Parameter Characterization at High Bias Levels
• 100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
• In Tape and Reel. R1 Suffix = 500 Units per
G
32 mm, 13 inch Reel.
S
MRF183R1
MRF183LSR1
1.0 GHz, 45 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF183R1
CASE 360C - 05, STYLE 1
NI - 360S
MRF183LSR1
MAXIMUM RATINGS
Rating
Drain- Source Voltage
Drain- Gate Voltage (RGS = 1 Meg Ohm)
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T_C = 70°C
Derate above 70°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_DGR
V_GS
I_D
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
65
± 20
5
86
0.67
- 65 to +200
200
Max
1.5
Unit
Vdc
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 15
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MRF183R1 MRF183LSR1
1
Archived 2005