MRF183R1 Datasheet, PDF (11/12 Pages) Motorola, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
PACKAGE DIMENSIONS
2X Q
B
G
1
aaa M T A M B M
B
(FLANGE)
3
2
2X D
bbb M T A M B M
2X K
N
ccc M T A M B M
(LID)
E
C
M
(INSULATOR)
T
SEATING
PLANE
bbb M T A M B M
A
A
R
(LID)
ccc M T A M B M
F
H
S
(INSULATOR)
aaa M T A M B M
CASE 360B - 05
ISSUE F
NI - 360
MRF183R1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.795 0.805
B 0.225 0.235
C 0.125 0.175
D 0.210 0.220
E 0.055 0.065
F 0.004 0.006
G 0.562 BSC
H 0.077 0.087
K 0.220 0.250
M 0.355 0.365
N 0.357 0.363
Q 0.125 0.135
R 0.227 0.233
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
20.19 20.45
5.72 5.97
3.18 4.45
5.33 5.59
1.40 1.65
0.10 0.15
14.28 BSC
1.96 2.21
5.59 6.35
9.02 9.27
9.07 9.22
3.18 3.43
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
B
A
(FLANGE)
1
2
B
(FLANGE)
2X D
2X K
bbb M T A M B M
N
(LID)
ccc M T A M B M
E
C
PIN 3
M
T
SEATING
PLANE
(INSULATOR)
bbb M T A M B M
R
(LID)
ccc M T A M B M
F
H
S
(INSULATOR)
aaa M T A M B M
CASE 360C - 05
ISSUE D
NI - 360S
MRF183LSR1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.375 0.385
B 0.225 0.235
C 0.105 0.155
D 0.210 0.220
E 0.035 0.045
F 0.004 0.006
H 0.057 0.067
K 0.085 0.115
M 0.355 0.365
N 0.357 0.363
R 0.227 0.23
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
9.53 9.78
5.72 5.97
2.67 3.94
5.33 5.59
0.89 1.14
0.10 0.15
1.45 1.70
2.16 2.92
9.02 9.27
9.07 9.22
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
MOTOROLA RF DEVICE DATA
MRF183R1 MRF183LSR1
11
Archived 2005