MMDF1N05E Datasheet, PDF (4/6 Pages) Motorola, Inc – DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

MMDF1N05E
VGS
0
1200
Ciss
1000
Crss
VDS
TJ = 25°C
800
VDS = 0
600
VGS = 0
400
Ciss
200
Coss
Crss
0
20 15 10 5 0 5 10 15 20 25
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
SAFE OPERATING AREA INFORMATION
Forward Biased Safe Operating Area
The FBSOA curves define the maximum drain–to–source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned on.
Because these curves include the limitations of simultaneous
high voltage and high current, up to the rating of the device,
they are especially useful to designers of linear systems. The
curves are based on a case temperature of 25°C and a maxi-
mum junction temperature of 150°C. Limitations for repetitive
pulses at various case temperatures can be determined by
using the thermal response curves. Motorola Application
Note, AN569, “Transient Thermal Resistance — General
Data and Its Use” provides detailed instructions.
12
10
VDS = 25 V
ID = 1.2 A
8
6
4
2
0
0
2
4
6
8 10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate Charge versus
Gate–To–Source Voltage
100
VGS = 20 V
SINGLE PULSE
10 ^{TC = 25°C}
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided) with one die operating, 10s max.
10 µs
100 µs
10 ms
1
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
10
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1.0E–05
SINGLE PULSE
1.0E–04
1.0E–03
Normalized to θja at 10s.
Chip 0.0175 Ω 0.0710 Ω 0.2706 Ω 0.5776 Ω 0.7086 Ω
0.0154 F 0.0854 F
0.3074 F 1.7891 F
107.55 F _Ambient
1.0E–02
1.0E–01
t, TIME (s)
1.0E+00
Figure 10. Thermal Response
1.0E+01
1.0E+02
1.0E+03
4
Motorola TMOS Power MOSFET Transistor Device Data