MMDF1N05E Datasheet, PDF (2/6 Pages) Motorola, Inc – DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

MMDF1N05E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
V(BR)DSS
50
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
IDSS
—
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IGSS
—
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.6 Adc)
RDS(on)
—
RDS(on)
—
Forward Transconductance (VDS = 15 V, ID = 1.5 A)
gFS
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
td(on)
—
Rise Time
Turn–Off Delay Time
(VDD = 10 V, ID = 1.5 A, RL = 10 Ω,
tr
—
VG = 10 V, RG = 50 Ω)
td(off)
—
Fall Time
tf
—
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(VDS = 10 V, ID = 1.5 A,
VGS = 10 V)
Qg
—
Qgs
—
Qgd
—
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage(1)
Reverse Recovery Time
(IS = 1.5 A, VGS = 0 V)
(dIS/dt = 100 A/µs)
VSD
—
trr
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.
—
—
Vdc
—
250
µAdc
—
100
nAdc
—
3.0
Vdc
Ohms
—
0.30
—
0.50
1.5
—
mhos
330
—
pF
160
—
50
—
—
20
ns
—
30
—
40
—
25
12.5
—
nC
1.9
—
3.0
—
—
1.6
V
45
—
ns
2
Motorola TMOS Power MOSFET Transistor Device Data