MMDF1N05E Datasheet, PDF (1/6 Pages) Motorola, Inc – DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MMDF1N05E/D
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistors
MMDF1N05E
MiniMOS™ devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the G
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided
• IDSS Specified at Elevated Temperature
®
D
DUAL TMOS MOSFET
50 VOLTS
1.5 AMPERE
RDS(on) = 0.30 OHM
CASE 751–05, Style 11
SO–8
S
Source–1
Gate–1
Source–2
Gate–2
18
27
36
45
Top View
Drain–1
Drain–1
Drain–2
Drain–2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Drain Current — Pulsed
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, IL = 2 Apk)
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25°C
Thermal Resistance – Junction to Ambient ⁽¹⁾
Maximum Temperature for Soldering,
Time in Solder Bath
VDS
VGS
ID
IDM
EAS
TJ, Tstg
PD
R_θJA
TL
50
± 20
2.0
10
300
– 55 to 150
2.0
62.5
260
10
Volts
Volts
Amps
mJ
°C
Watts
°C/W
°C
Sec
DEVICE MARKING
F1N05
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
Device
ORDERING INFORMATION
Reel Size
Tape Width
Quantity
MMDF1N05ER2
13″
12 mm embossed tape
2500
MiniMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
REV 5
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