MMDF1N05E Datasheet, PDF (3/6 Pages) Motorola, Inc – DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

TYPICAL ELECTRICAL CHARACTERISTICS
MMDF1N05E
10 _{10 V 6 V}
8V
8
6
4
2
TJ = 25°C
5V
4.5 V
4V
VGS = 3.5 V
0
0
2
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
10
VDS ≥ 10 V
8
6
– 55°C
25°C
100°C
4
25°C
2
100°C
– 55°C
00
1
2
3
4
5
6
7
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.5
VGS = 10 V
0.4
0.3
0.2
100°C
25°C
0.1
– 55°C
0
0
2
4
6
8
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
1.8
1.6
VGS = 10 V
1.4
ID = 1.5 A
1.2
1
0.8
0.6
0.4
0.2
0
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On–Resistance Variation with Temperature
0.5
0.4
ID = 1.5 A
VGS = 0
0.3
0.2
0.1
0
2
3
4
5
6
7
8
9 10
TJ, JUNCTION TEMPERATURE
Figure 5. On Resistance versus
Gate–To–Source Voltage
1.2
1.1
VDS = VGS
ID = 1 mA
1
0.9
0.8
0.7
– 50 – 25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 6. Gate Threshold Voltage Variation
with Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3