MMBT5550LT1 Datasheet, PDF (4/6 Pages) Motorola, Inc – High Voltage Transistors

MMBT5550LT1 MMBT5551LT1
2.5
2.0
TJ = – 55°C to +135°C
1.5
1.0
0.5
q_VC for VCE(sat)
0
– 0.5
– 1.0
q_VB for VBE(sat)
– 1.5
– 2.0
– 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
10.2 V
Vin
10 µs
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
VBB
– 8.8 V
100
0.25 µF _RB
5.1 k
Vin
100
VCC
30 V
3.0 k RC
Vout
1N914
Values Shown are for IC @ 10 mA
Figure 6. Switching Time Test Circuit
100
70
TJ = 25°C
50
30
20
10
7.0
Cibo
5.0
3.0
Cobo
2.0
1.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
1000
500
300
200
tr @ VCC = 30 V
100
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
50
td @ VEB(off) = 1.0 V
30
VCC = 120 V
20
10
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
100 200
Figure 8. Turn–On Time
5000
3000
tf @ VCC = 120 V
2000
tf @ VCC = 30 V
1000
500
300 _{ts @ VCC = 120 V}
200
IC/IB = 10
TJ = 25°C
100
50
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
100 200
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data