MMBT5550LT1 Datasheet, PDF (3/6 Pages) Motorola, Inc – High Voltage Transistors

500
300
200
TJ = 125°C
25°C
100
– 55°C
50
30
20
10
7.0
5.0
0.1
0.2 0.3
MMBT5550LT1 MMBT5551LT1
VCE = 1.0 V
VCE = 5.0 V
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
20 30
50 70 100
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
30 mA
100 mA
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
IB, BASE CURRENT (mA)
5.0
10
20
50
Figure 2. Collector Saturation Region
101
VCE = 30 V
100
10–1
TJ = 125°C
IC = ICES
10–2
75°C
10–3
REVERSE
FORWARD
10–4
25°C
10–5
0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut–Off Region
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3