MMBT5550LT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – High Voltage Transistors

MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT5550
MMBT5551
hFE
—
60
—
80
—
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBT5550
MMBT5551
60
250
80
250
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
MMBT5550
MMBT5551
Both Types
MMBT5550
MMBT5551
Both Types
MMBT5550
MMBT5551
20
30
VCE(sat)
—
—
—
VBE(sat)
—
—
—
—
—
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data