MMBT5550LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – High Voltage Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT5550LT1/D
High Voltage Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBT5550LT1
MMBT5551LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
140
Vdc
VCBO
160
Vdc
VEBO
6.0
Vdc
IC
600
mAdc
Characteristic
Symbol
Max
Total Device Dissipation FR– 5 Board(1)
PD
225
TA = 25°C
Derate above 25°C
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
MMBT5550
MMBT5551
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5550
MMBT5551
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MMBT5550
MMBT5551
MMBT5550
MMBT5551
V(BR)EBO
ICBO
IEBO
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min
Max
Unit
Vdc
140
—
160
—
Vdc
160
—
180
—
Vdc
6.0
—
—
100
nAdc
—
50
—
100
µAdc
—
50
nAdc
—
50
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1