MMBD110T1 Datasheet, PDF (4/8 Pages) Motorola, Inc – Schottky Barrier Diodes

MMBD110T1 MMBD330T1 MMBD770T1
TYPICAL CHARACTERISTICS
MMBD330T1
2.8
MMBD330T1
2.4
f = 1.0 MHz
2.0
1.6
1.2
0.8
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Total Capacitance
500
MMBD330T1
400
KRAKAUER METHOD
300
200
100
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 7. Minority Carrier Lifetime
10
MMBD330T1
1.0
TA = 100°C
TA = 75°C
0.1
TA = 25°C
0.01
100
MMBD330T1
10
TA = 85°C
TA = – 40°C
1.0
TA = 25°C
0.001
0
0.1
6.0
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
VR, REVERSE VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 8. Reverse Leakage
Figure 9. Forward Voltage
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data