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MMBD110T1 Datasheet, PDF (1/8 Pages) Motorola, Inc – Schottky Barrier Diodes
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high–efficiency UHF and
VHF detector applications. Readily available to many other fast switching RF
and digital applications. They are housed in the SOT–323/SC–70 package
which is designed for low–power surface mount applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
• Available in 8 mm Tape and Reel
Order this document
BY MMBD110T1/D
MMBD110T1
MMBD330T1
MMBD770T1
3
1
2
CASE 419A–02, STYLE 2
SOT-323/SC–70
MAXIMUM RATINGS
Reverse Voltage
Rating
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD110T1 = 4M
MMBD330T1 = 4T
MMBD770T1 = 5H
Symbol
Value
Unit
MMBD110T1
VR
MMBD330T1
MMBD770T1
7.0
Vdc
30
70
PF
120
mW
TJ
– 55 to +125
°C
Tstg
– 55 to +150
°C
Thermal Clad is a registered trademark of the Bergquist Company.
©MMotootorroollaa, SInmc. 1a9ll9–6Signal Transistors, FETs and Diodes Device Data
1