MMBD110T1 Datasheet, PDF (2/8 Pages) Motorola, Inc – Schottky Barrier Diodes

MMBD110T1 MMBD330T1 MMBD770T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 µA)
V(BR)R
MMBD110T1
7.0
10
MMBD330T1
30
—
MMBD770T1
70
—
Volts
—
—
—
Diode Capacitance
(VR = 0, f = 1.0 MHZ, Note 1)
(VR = 15 Volts, f = 1.0 MHZ)
(VR = 20 Volts, f = 1.0 MHZ)
Reverse Leakage
(VR = 3.0 V)
(VR = 25 V)
(VR = 35 V)
Noise Figure
(f = 1.0 GHz, Note 2)
MMBD110T1
MMBD330T1
MMBD770T1
MMBD110T1
MMBD330T1
MMBD770T1
MMBD110T1
CT
pF
—
0.88
1.0
—
0.9
1.5
—
0.5
1.0
IR
nAdc
—
20
250
—
13
200
—
9.0
200
NF
dB
—
6.0
—
Forward Voltage
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
MMBD110T1
MMBD330T1
MMBD770T1
VF
Vdc
—
0.5
0.6
—
0.38
0.45
—
0.52
0.6
—
0.42
0.5
—
0.7
1.0
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data