MMBD110T1 Datasheet, PDF (3/8 Pages) Motorola, Inc – Schottky Barrier Diodes

MMBD110T1 MMBD330T1 MMBD770T1
TYPICAL CHARACTERISTICS
MMBD110T1
1.0
0.7
0.5
VR = 3.0 Vdc
0.2
0.1
0.07
0.05
0.02
MMBD110T1
0.01
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
100
10
TA = 85°C
TA = – 40°C
1.0
0.1
0.3
TA = 25°C
MMBD110T1
0.4
0.5
0.6
0.7
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
11
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
9
(Test Circuit Figure 5)
0.9
8
7
0.8
6
5
4
0.7
3
MMBD110T1
2
MMBD110T1
0.6
1
0
1.0
2.0
3.0
4.0
0.1 0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CC and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscil-
lator (LO) frequency of 1.0 GHz. The LO power is ad-
justed for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30
MHz, see Figure 5.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3