MLP1N06CL Datasheet, PDF (2/6 Pages) Motorola, Inc – VOLTAGE CLAMPED CURRENT LIMITING MOSFET

MLP1N06CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain–to–Source Sustaining Voltage (Internally Clamped)
V(BR)DSS
(ID = 20 mA, VGS = 0)
59
62
(ID = 20 mA, VGS = 0, TJ = 150°C)
59
62
Zero Gate Voltage Drain Current
(VDS = 45 V, VGS = 0)
(VDS = 45 V, VGS = 0, TJ = 150°C)
IDSS
—
0.6
—
6.0
Gate–Body Leakage Current
(VG = 5.0 V, VDS = 0)
(VG = 5.0 V, VDS = 0, TJ = 150°C)
IGSS
—
0.5
—
1.0
ON CHARACTERISTICS*
Gate Threshold Voltage
(ID = 250 µA, VDS = VGS)
(ID = 250 µA, VDS = VGS, TJ = 150°C)
VGS(th)
1.0
1.5
0.6
—
Static Drain–to–Source On–Resistance
(ID = 1.0 A, VGS = 4.0 V)
(ID = 1.0 A, VGS = 5.0 V)
(ID = 1.0 A, VGS = 4.0 V, TJ = 150°C)
(ID = 1.0 A, VGS = 5.0 V, TJ = 150°C)
RDS(on)
—
0.63
—
0.59
—
1.1
—
1.0
Forward Transconductance (ID = 1.0 A, VDS = 10 V)
gFS
1.0
1.4
Static Source–to–Drain Diode Voltage (IS = 1.0 A, VGS = 0)
VSD
—
1.1
Static Drain Current Limit
(VGS = 5.0 V, VDS = 10 V)
(VGS = 5.0 V, VDS = 10 V, TJ = 150°C)
ID(lim)
2.0
2.3
1.1
1.3
RESISTIVE SWITCHING CHARACTERISTICS*
Turn–On Delay Time
td(on)
—
1.2
Rise Time
(VDD = 25 V, ID = 1.0 A,
tr
—
4.0
Turn–Off Delay Time
VGS = 5.0 V, RG = 50 Ohms)
td(off)
—
4.0
Fall Time
tf
* Indicates Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
—
3.0
4
TJ = 25°C
4 ^{VDS ≥ 7.5 V}
3
10 V
6V
8V
3
4V
2
2
1
VGS = 3 V
1
Max
Unit
Vdc
65
65
µAdc
5.0
20
µAdc
5.0
20
Vdc
2.0
1.6
Ohms
0.75
0.75
1.9
1.8
—
mhos
1.5
Vdc
A
2.75
1.8
2.0
µs
6.0
6.0
5.0
–50°C
25°C
TJ = 150°C
0
0
2
4
6
8
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0
0
2
4
6
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Transfer Function
2
Motorola TMOS Power MOSFET Transistor Device Data