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MLP1N06CL Datasheet, PDF (1/6 Pages) Motorola, Inc – VOLTAGE CLAMPED CURRENT LIMITING MOSFET | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SMARTDISCRETES â¢
Internally Clamped, Current Limited
NâChannel Logic Level Power MOSFET
These SMARTDISCRETES devices feature current limiting for short circuit
protection, an integral gateâtoâsource clamp for ESD protection and gateâtoâdrain
clamp for overâvoltage protection. No additional gate series resistance is required
when interfacing to the output of a MCU, but a 40 k⦠gate pulldown resistor is
recommended to avoid a floating gate condition.
The internal gateâtoâsource and gateâtoâdrain clamps allow the devices to be
applied without use of external transient suppression components. The gateâtoâ
source clamp protects the MOSFET input from electrostatic gate voltage stresses
up to 2.0 kV. The gateâtoâdrain clamp protects the MOSFET drain from drain
avalanche stresses that occur with inductive loads. This unique design provides
voltage clamping that is essentially independent of operating temperature.
The MLP1N06CL is fabricated using Motorolaâs SMARTDISCRETES technolo-
gy which combines the advantages of a power MOSFET output device with
onâchip protective circuitry. This approach offers an economical means for
providing additional functions that protect a power MOSFET in harsh automotive
and industrial environments. SMARTDISCRETES devices are specified over a
wide temperature range from â50°C to 150°C.
⢠Temperature Compensated GateâtoâDrain Clamp Limits Voltage Stress
Applied to the Device and Protects the Load From Overvoltage
⢠Integrated ESD Diode Protection
⢠Controlled Switching Minimizes RFI
⢠Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 1.0 Mâ¦)
GateâtoâSource Voltage â Continuous
Drain Current â Continuous
Drain Current â Single Pulse
Total Power Dissipation
Electrostatic Discharge Voltage (Human Body Model)
VDSS
VDGR
VGS
ID
IDM
PD
ESD
Clamped
Clamped
±10
Selfâlimited
1.8
40
2.0
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
TJ, Tstg
â50 to 150
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes,
1/8â³ from case
RθJC
3.12
RθJA
62.5
TL
260
UNCLAMPED DRAINâTOâSOURCE AVALANCHE CHARACTERISTICS
Single Pulse DrainâtoâSource Avalanche Energy
EAS
80
(Starting TJ = 25°C, ID = 2.0 A, L = 40 mH) (Figure 6)
SMARTDISCRETES is a trademark of Motorola, Inc.
Unit
Vdc
Vdc
Vdc
Adc
Watts
kV
°C
°C/W
°C
mJ
Order this document
by MLP1N06CL/D
MLP1N06CL
Motorola Preferred Device
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.75 OHMS
D
R1
G
R2
S
G
D
S
CASE 221Aâ06, Style 5
TOâ220AB
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
1
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