CM400E2G-130H Datasheet, PDF (8/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
1200
1000
VCC ≤ 4500V, VGE = ±15V
Tj = 125°C, RG(off) = 50Ω
800
600
400
200
0
0
2000 4000 6000 8000
Collector-Emitter Voltage [V]
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
10000
8000
V_CC ≤ 4500V, V_GE = ±15V
R_G(on) = 15Ω, R_G(off) = 50Ω
Tj = 125°C
6000
4000
2000
0
0
2000 4000 6000 8000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
1200
1000
VCC ≤ 4500V, Tj = 125°C
di/dt < 2000A/µs
800
600
400
200
0
0
2000 4000 6000 8000
Collector-Emitter Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B 8 of 8