CM400E2G-130H Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
V_CES
Collector-emitter voltage
V_GE = 0 V
T_j = -40 °C
T_j = +25 °C
5800
6300
V
T_j = +125 °C
6500
V_GES
Gate-emitter voltage
V_CE = 0V, T_j = 25°C
± 20
V
I_C
Collector current
I_CM
DC, T_c = 80°C
Pulse ^{(Note 1)}
400
A
800
A
I_E
Emitter current
I_EM
(Note 2)
DC
Pulse ^{(Note 1)}
P_c
Maximum power dissipation ^{(Note 3)} Tc = 25°C, IGBT part
400
A
800
A
5900
W
V_iso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1 min.
10200
V
V_e
Partial discharge extinction voltage
RMS, sinusoidal, f = 60Hz, Q_PD ≤ 10 pC
5100
V
T_j
Junction temperature
−40 ~ +150
°C
T_op
Operating temperature
−40 ~ +125
°C
T_stg
Storage temperature
−40 ~ +125
°C
t_psc
Maximum short circuit pulse width
V_CC =4500V, V_CE ≤ V_CES, V_GE =15V, T_j =125°C
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min
Typ
Max
I_CES
V_GE(th)
I_GES
C_ies
C_oes
C_res
Q_g
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
T_j = 25°C
—
—
7
V_CE = V_CES, V_GE = 0V
mA
T_j = 125°C
—
20
60
V_CE = 10 V, I_C = 40 mA, T_j = 25°C
5.0
6.0
7.0
V
V_GE = V_GES, V_CE = 0V, T_j = 25°C
−0.5
—
0.5
µA
—
82.0
—
nF
V_CE = 10 V, V_GE = 0 V, f = 100 kHz
—
5.0
—
nF
T_j = 25°C
—
1.4
—
nF
V_CC = 3600 V, I_C = 400 A
V_GE = ±15 V, T_j = 25 °C
—
6.6
—
µC
V_CE(sat)
Collector-emitter saturation voltage
I_C = 400 A ^{(Note 4)}
V_GE = 15 V
T_j = 25°C
—
4.5
—
T_j = 125°C
—
4.6
—
V
t_d(on)
Turn-on delay time
V_CC = 3600 V, I_C = 400 A
—
1.2
—
µs
t_r
Turn-on rise time
V_GE = ±15 V, R_G(on) = 15 Ω
—
0.35
—
µs
T_j = 125 °C, L_s = 170 nH
E_on(10%)
Turn-on switching energy
(Note 5) _{t(IGBT_off) = 60 µs} (Note 6)_{, Inductive load}
—
3.0
—
J/P
t_d(off)
t_f
t_f2
E_off(10%)
Turn-off delay time
Turn-off fall time
Turn-off fall time
Turn-off switching energy
(Note 5)
V_CC = 3600 V, I_C = 400 A
V_GE = ±15 V, R_G(off) = 50 Ω
T_j = 125 °C, L_s = 170 nH
Inductive load
—
8.2
—
µs
—
0.5
—
µs
—
3.1
—
µs
—
2.7
—
J/P
V_EC
Emitter-collector voltage
(Note 2)
I_E = 400 A ^{(Note 4)}
T_j = 25 °C
—
4.0
—
V
V_GE = 0 V
T_j = 125 °C
—
3.6
—
t_rr
Reverse recovery time
(Note 2)
V_CC = 3600 V, I_E = 400 A
t_rr2
Reverse recovery time
(Note 2) _{VGE = ±15 V, RG(on) = 15 Ω}
—
1.0
—
µs
—
2.4
—
µs
Q_rr
Reverse recovery charge
(Note 2) _{Tj = 125 °C, Ls = 170 nH}
—
740
—
µC
E_rec(10%)
Reverse recovery energy ^{(Note 2), (Note 5)}
t_{(IGBT_off)} = 60 µs ^{(Note 6)}, Inductive load
—
1.4
—
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B 2 of 8