CM400E2G-130H Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
Cies
100
10
Coes
1
Cres
VGE = 0V, Tj = 25°C
f = 100kHz
0
0.1
1
10
100
Collector-Emitter Voltage [V]
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 3600V, IC = 400A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
2
4
6
8
10
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
7
VCC = 3600V, VGE = ±15V
RG(on) = 15Ω, RG(off) = 50Ω
6 ^{LS = 170nH, Tj = 125°C}
Inductive load
Eon
5
Eoff
4
3
Erec
2
1
0
0
200 400 600 800 1000
Collector Current [A]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
VCC = 3600V, IC = 400A
7 ^{VGE = ±15V, LS = 170nH}
Tj = 125°C, Inductive load
6
Eon
5
4
Eoff
3
2
Erec
1
0
0
20
40
60
80
100
Gate resistor [Ohm]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B 6 of 8