CM400E2G-130H Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400E2G-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
10%V_GE
0
90%V_GE
V_GE
90%I_C
10%I_C
0
td(on) tr
ton
t1
V_CC
I_C
10%V_CE
V_CE
t2
∫ ^{Eon =}
ic•vce dt
t1
t2
di
10%V_CE
90%I_C
50%I_C
dt
10%I_C
td(off)
t3
tf2
t4
t4
∫ ^{Eoff =}
ic•vce dt
t3
tf = (0.9ic − 0.1ic) / (di/dt)
toff = td(off) + tf
Fig. ２ – Definitions of switching times & energies of IGBT part
I_E (I_F)
di
0
Irr
0
di/dt
trr
dt
10%V_EC
10%I_E
V_EC (V_R)
t6
∫ ^{Qrr = –}
ie dt
0
t6
∫ Erec = – ie•vec dt
t5
trr2
0 t5
t6
Fig. ３ – Definitions of reverse recovery charge & energy of FWDi part
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1048-B 4 of 8