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CM75RX-24A Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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MITSUBISHI IGBT MODULES
CM75RX-24A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
103
7
5
tf
3
2
td(off)
102
7
5
td(on)
3
2
101
7
5
3
2
1010 00
tr
2 3 5 7 101
Conditions:
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive load
2 3 5 7 102
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
102
Conditions:
7 VCC = 600V
5 VGE = ±15V
3 IC, IE = 75A
Tj = 125°C
Eon
2 Inductive load
101
7
Eoff
5
3
Err
2
1010 00 2 3 5 7 101 2 3 5 7 102
GATE RESISTANCE RG (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 75A
VCC = 400V
15
VCC = 600V
10
5
0
0 100 200 300 400 500
GATE CHARGE QG (nC)
7
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
101
7
5
3
2
100
7
5
3
2
10â11 00
Eoff
Err
23
Eon
5 7 101
Conditions:
VCC = 600V
VGE = ±15V
RG = 4.3Ω
Tj = 125°C
Inductive load
2 3 5 7 102
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
103
7
5
3
2
102
trr
7
5
Irr
3
2
101
7
5
3
2
1010 00
23
5 7 101
Conditions:
VCC = 600V
VGE = ±15V
RG = 4.3Ω
Tj = 25°C
Inductive load
2 3 5 7 102
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
100
7 Single pulse,
5 TC = 25°C
3
2
10â1
7
5
3
2
10â2
7
5
Inverter IGBT part
: Per unit base = Rth(jâc) = 0.25K/W
3 Inverter FWDi part : Per unit base = Rth(jâc) = 0.40K/W
2 Brake IGBT part : Per unit base = Rth(jâc) = 0.35K/W
Brake Clamp-Di part : Per unit base = Rth(jâc) = 0.63K/W
10â3
10â52 3 5710â42 3 5710â32 3 5710â22 3 5710â12 3 57100 2 3 57101
TIME (s)
Jan. 2009
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