CM75RX-24A Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
VCES
Collector-emitter voltage
G-E Short
VGES
IC
ICRM
PC
Gate-emitter voltage
Collector current
Maximum collector dissipation
C-E Short
DC, TC = 93°C
Pulse
TC = 25°C
IE (Note.3) Emitter current
TC = 25°C
IERM(Note.3) (Free wheeling diode forward current) Pulse
Conditions
MITSUBISHI IGBT MODULES
CM75RX-24A
HIGH POWER SWITCHING USE
Rating
Unit
1200
V
±20
(Note. 1)
75
A
(Note. 4)
150
(Note. 1, 5)
500
W
(Note. 1)
75
A
(Note. 4)
150
BRAKE PART
Symbol
Parameter
Conditions
Rating
Unit
VCES
VGES
IC
ICRM
PC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
G-E Short
C-E Short
DC, TC = 97°C
Pulse
TC = 25°C
1200
V
±20
(Note. 1)
50
A
(Note. 4)
100
(Note. 1, 5)
355
W
VRRM(Note.3) Repetitive peak reverse voltage
IF (Note.3) _{Forward current}
IFRM(Note.3)
TC = 25°C
Pulse
1200
V
(Note. 1)
50
A
(Note. 4)
100
MODULE
Symbol
Parameter
Conditions
Tj
Tstg
Viso
—
—
—
—
Junction temperature
Storage temperature
Isolation voltage
Base plate flatness
Torque strength
Torque strength
Weight
Terminals to base plate, f = 60Hz, AC 1 minute
On the centerline X, Y
(Note. 8)
Main terminals
M5 screw
Mounting
M5 screw
(Typical)
Note. 8: The base plate flatness measurement points are in the following figure.
:
9
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DPOWFY

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DPODBWF
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)FBU
TJOL
TJEF
Rating
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
2.5 ~ 3.5
330
Unit
°C
Vrms
μm
N·m
g
Jan. 2009
2