CM75RX-24A Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL) Inverter part
150
VGE =
15
20V
125
Tj = 25°C
13
100
12
75
11
50
25
10
9
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
10
Tj = 25°C
8
6
4
IC = 150A
2
IC = 75A
IC = 30A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
10²
7
5
3
2
10¹
Cies
7
5
3
2
Coes
10⁰
7
5
3
2
10^–1
7
5
3
10^–2₁² _0–^V₁^G₂^E
=
3
0V
5
7
10⁰
2
3
Cres
5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
6
MITSUBISHI IGBT MODULES
CM75RX-24A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
4
VGE = 15V
3.5
3
2.5
2
1.5
1
0.5
0
0
Tj = 25°C
Tj = 125°C
25 50 75 100 125 150
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
Tj = 25°C
Tj = 125°C
10⁰
0 0.5 1 1.5 2 2.5 3 3.5 4
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
tf
3
2
td(off)
10²
7
5
td(on)
3
2
Conditions:
10¹ _{VCC = 600V}
7
5
VGE = ±15V
3 ^{RG = 4.3Ω}
2 ^{Tj = 125°C}
Inductive load
10⁰_{100 2 3 5 7 101}
23
tr
5 7 10²
COLLECTOR CURRENT IC (A)
Jan. 2009