CM75RX-24A Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM75RX-24A
HIGH POWER SWITCHING USE
NTC THERMISTOR PART
Symbol
R
ΔR
B(25/50)
P25
Parameter
Zero power resistance
Deviation of resistance
B constant
Power dissipation
Conditions
TC = 25°C
TC = 100°C, R100 = 493Ω
Approximate by equation
TC = 25°C
Limits
Min.
Typ.
Max. ^Unit
4.85
5.00
5.15
kΩ
–7.3
—
+7.8
%
(Note. 7) —
3375
—
K
—
—
10
mW
MODULE
Symbol
Rth(c-f)
Parameter
Conditions
Contact thermal resistance Thermal grease applied
(Case to fin)
(Note. 1) per 1 module
Min.
(Note. 2) ^—
Limits
Typ.
0.015
Max.
—
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
7: B(25/50)
=
In(
R25
R50
)/(
1
T25
1)
T50
R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]
Unit
K/W
Chip Location (Top view)
0
19.6
25.6
28.7
34.7
Dimensions in mm (tolerance: ±1mm)
LABEL SIDE
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
Tr
Tr
35
UP
Di
Tr
UN
VP
Di
Tr
VN
UP _{D i} VP _{D i}
UN
VN
36
Tr
WP
Di
WP
Di
Br
Tr
WN
Th
Di
12
11
10
9
8
WN _{T r}
Br
7
6
5
1
2
3
4
0
17.3
26.8
40.8
(110)
(121.7)
(136.9)
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor
Jan. 2009
4