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| CM400C1Y-24S Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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< IGBT MODULES >
CM400C1Y-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 â¦,
INDUCTIVE LOAD
1000
Tj=125 °C
Tj=150 °C
td(off)
td(on)
tf
tr
100
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC=400 A, VGE=±15 V,
INDUCTIVE LOAD
1000
10000
Tj=125 °C
Tj=150 °C
td(off)
tf
100
1000
td(on)
tr
10
10
100
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 â¦,
INDUCTIVE LOAD, PER PULSE
100
1000
1000
10
Eoff
100
Eon
1
Err
10
0.1
10
Tj=125 °C
Tj=150 °C
1
100
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
10
100
0.1
1
10
100
EXTERNAL GATE RESISTANCE RG (â¦)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC/IE=400 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
1000
100
Tj=125 °C
Tj=150 °C
Eoff
100
Eon
10
Err
10
1
0.1
1
10
100
EXTERNAL GATE RESISTANCE RG (â¦)
Publication Date : September 2011
7
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