CM400C1Y-24S Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM400C1Y-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
TEST CIRCUIT
Tr1/Tr2: IGBT, Di1/Di2: FWDi
Es1
VGE=15 V ^G1
Short-
circuited
G2
Es2
C1
IC
C2E1
V
E2
Es1
Short- ^G1
circuited
VGE=15 V
G2
Es2
C1
V
C2E1
I_C
E2
Tr1
Tr2
VCEsat test circuit
Es1
Short- ^G1
circuited
Short-
circuited
G2
Es2
C1
IE
C2E1
V
E2
Es1
Short- ^G1
circuited
Short-
circuited
G2
Es2
C1
V
C2E1
I_E
E2
Di1
Di2
VEC test circuit
Publication Date : September 2011
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