CM400C1Y-24S Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM400C1Y-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Thermal resistance ^(Note.2)
Contact thermal resistance ^(Note.2)
Conditions
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied ^(Note.6)
Limits
Unit
Min.
Typ.
Max.
-
-
56
K/kW
-
-
95
K/kW
-
18
-
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
Mounting torque
M_s
m
Weight
e_c
Flatness of base plate
Conditions
Main terminals
Mounting to heat sink
-
On the centerline X, Y
(Note.7)
M 6 screw
M 6 screw
Limits
Unit
Min.
Typ.
Max.
3.5
4.0
4.5
N·m
3.5
4.0
4.5
N·m
-
580
-
g
-100
-
+100
μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
2. Case temperature (T_C) and heat sink temperature (T _s ) are defined on the each surface (mounting side) of base plate and heat sink just under
the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
3. Pulse width and repetition rate should be such that the device junction temperature (T _j ) dose not exceed T _{j m a x} rating.
4. Junction temperature (T _j ) should not increase beyond T _{j m a x} rating.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
X
mounting
side
Y
3 mm
mounting
side
-:Concave
mounting side
+:Convex
*. DC current rating is limited by power terminals.
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
V_CC
V_GEon
R_G
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Conditions
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
Limits
Unit
Min.
Typ.
Max.
-
600
850
V
13.5
15.0
16.5
V
0
-
10
Ω
Publication Date : September 2011
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