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CM400C1Y-24S Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM400C1Y-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
800
VGE=20 V
13.5
700
15
12
600
(Chip)
500
11
400
300
10
200
9
100
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T j =25 °C
10
(Chip)
8
6
IC=160A
IC=400A IC=800A
4
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE=15 V
3.5
(Chip)
3.0
Tj =125 °C
2.5
Tj =150 °C
2.0
1.5
T j =25 °C
1.0
0.5
0.0
0
100
200
300
400
500
600
700
800
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
1000
(Chip)
Tj =150 °C
Tj =125 °C
100
T j =25 °C
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE VEC (V)
Publication Date : September 2011
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