CM2400HCB-34N Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
6000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 1200V, VGE = ±15V
Tj = 125°C, RG (off) ≥ 1.1Ω
5000
4000
3000
2000
1000
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
40000
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
VCC ≤ 1000V, VGE = ±15V
RG (on) ≥ 0.8Ω, RG (off) ≥ 1.1Ω
Tj = 125°C, tpsc ≤ 10µs
30000
20000
10000
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
3000
VCC ≤ 1200V, di/dt ≤ 9000A/µs
Tj = 125°C
2500
2000
1500
1000
500
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
Sep. 2009