CM2400HCB-34N Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM2400HCB-34N
● IC ............................................................... 2400 A
● VCES ...................................................... 1700 V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
● Trench Gate IGBT : CSTBT^TM
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.1
190 ±0.5
171±0.1
57±0.1
57±0.1
6 - M8 NUTS
C
C
CM
E
E
C
EG
3 - M4 NUTS
screwing depth
min. 7.7
79.4 ±0.3
20.25 ±0.2
41.25 ±0.3
61.5 ±0.3
61.5 ±0.3
13 ±0.2
C
C
C
C
C
G
E
E
E
E
E
CIRCUIT DIAGRAM
8 - φ7±0.1 MOUNTING HOLES
screwing depth
min. 16.5
5.2 ±0.2
40 ±0.3
15 ±0.2
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1
Sep. 2009