CM2400HCB-34N Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm
Limits
Unit
Min
Typ
Max
—
—
8.0 K/kW
—
—
12.0 K/kW
—
6.0
— K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
Min
Mt
M8: Main terminals screw
7.0
Ms
Mounting torque
M6: Mounting screw
3.0
Mt
M4: Auxiliary terminals screw
1.0
m
Mass
—
CTI
Comparative tracking index
600
da
Clearance
19.5
ds
Creepage distance
32.0
LP CE
Parasitic stray inductance
—
RCC’+EE’ Internal lead resistance
Tc = 25°C
—
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
Limits
Typ
—
—
—
1.5
—
—
—
10
0.18
Max
13.0
6.0
2.0
—
—
—
—
—
—
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
3
Sep. 2009