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| CM2400HCB-34N Datasheet, PDF (6/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)
101
7 VCC = 900V, VGE = ±15V
5 RG (on) = 0.8â¦, RG (off) = 1.1â¦
Tj = 125°C, Inductive load
3
td(off)
2
100
td(on)
7
5
tf
3
2
10-1
7
5
tr
3
2
10-12 02
2 3 4 5 7 103
2 3 4 5 7 104
COLLECTOR CURRENT (A)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
102
104
7 VCC = 900V, VGE = ±15V
7
5 RG (on) = 0.8â¦, Tj = 125°C
5
Inductive load
3
3
2
2
lrr
101
103
7
7
5
5
3
3
2
2
trr
100
102
7
7
5
5
3
3
2
2
10-11 02
2 3 4 5 7 103
101
2 3 4 5 7 104
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
Rth(jâc)Q = 8.0K/kW
Rth(jâc)R = 12.0K/kW
1.0
0.8
0.6
0.4
0.2
010-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101
TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
6
Sep. 2009
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