CM1200HCB-34N Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
6000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 1200V, VGE = ±15V
Tj = 125°C, RG (off) ≥ 2.0Ω
5000
4000
3000
2000
1000
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
25000
20000
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
VCC ≤ 1000V, VGE = ±15V
RG (on) ≥ 1.1Ω, RG (off) ≥ 2.0Ω
Tj = 125°C, tpsc ≤ 10µs
15000
10000
5000
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
1600
VCC ≤ 1200V, di/dt ≤ 6500A/µs
Tj = 125°C
1400
1200
1000
800
600
400
200
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
Sep. 2009