CM1200HCB-34N Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2500
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 125°C
2000
VGE = 20V
VGE = 15V
VGE = 10V
1500 _{VGE = 12V}
2500
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 20V
2000
1500
1000
500
VGE = 8V
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
1000
500
0
0
Tj = 25°C
Tj = 125°C
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
2500
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 15V
2000
1500
1000
500
Tj = 25°C
Tj = 125°C
0
0
1
2
3
4
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
2500
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
2000
1500
1000
500
Tj = 25°C
Tj = 125°C
0
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4
Sep. 2009