CM1200HCB-34N Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
7
Coes
5
3
2 ^{VGE = 0V, Tj = 25°C}
f = 100kHz
101⁰_{0-1 2 3 5 7100 2 3}
5 710¹
Cres
2 3 5 710²
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
1.8
VCC = 900V, VGE = ±15V
1.6 ^{RG (on) = 1.1Ω, RG (off) = 2.0Ω}
Tj = 125°C, Inductive load
1.4
Eon
1.2
1.0
0.8
Eoff
0.6
0.4
Erec
0.2
0
0
500 1000 1500 2000 2500
COLLECTOR CURRENT (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 900V, IC = 1200A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
5
10
15
20
GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
3.5
VCC = 900V, IC = 1200A
VGE = ±15V, Tj = 125°C
3.0 Inductive load
Eon
2.5
2.0
1.5
1.0
0.5
0
0
Eoff
Erec
2
4
6
8
10
12
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
5
Sep. 2009