CM1200HCB-34N Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM1200HCB-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HCB-34N
● IC ................................................................ 1200A
● VCES ....................................................... 1700V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
● Trench Gate IGBT : CSTBT^TM
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.1
130±0.5
114±0.1
57±0.1
4 - M8 NUTS
C
C
CM
E
E
C
E
G
C
C
C
G
E
E
E
CIRCUIT DIAGRAM
3 - M4 NUTS
10.65±0.2
48.8±0.3
10.35±0.2
screwing depth
min. 7.7
61.5±0.3
18±0.2
6 - φ7±0.1MOUNTING HOLES
screwing depth
min. 16.5
5.2±0.2
40±0.3
15±0.2
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009