CM750HG-130R Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM750HG-130R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
12
VCC = 3600V, IC = 750A
VGE = ±15V, L_S = 150nH
10 ^{Tj = 125°C, Inductive load}
8
6
E_off
4
2
0
0
10
20
30
40
50
Gate resistor [Ohm]
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
V_CC = 3600V, V_GE = ±15V
R_G(on) = 3.9Ω, R_G(off) = 33Ω
L_S = 150nH, T_j = 125°C
Inductive load
10
t_d(off)
1
t_f
t_d(on)
0.1
t_r
0.01
100
1000
Collector Current [A]
10000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V_CC = 3600V, V_GE = ±15V
R_G(on) = 3.9Ω, L_S = 150nH
T_j = 125°C, Inductive load
10000
I_rr
10
1000
1
t_rr
100
0.1
100
1000
Emitter Current [A]
10
10000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
2500
2000
VCC ≤ 4500V, VGE = ±15V
T_j = 125°C, RG(off) = 33Ω
1500
1000
500
0
0
2000 4000 6000 8000
Collector-Emitter Voltage [V]
June 2011
6