CM750HG-130R Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM750HG-130R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
V_CES
V_GES
I_C
I_CRM
I_E
I_ERM
P_tot
V_iso
V_e
T_j
T_jop
T_stg
t_psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
V_GE = 0V, T_j = +125 °C
V_GE = 0V, T_j = +25°C
V_GE = 0V, T_j = −50°C
V_CE = 0V, T_j = 25°C
DC, T_c = 95°C
Pulse
DC
Pulse
T_c = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
RMS, sinusoidal, f = 60Hz, Q_PD ≤ 10 pC
(Note 1)
(Note 1)
V_CC = 4500 V, V_CE ≤ V_CES, V_GE = 15V, T_j = 125°C
Ratings
Unit
6500
6300
V
5700
±20
V
750
A
1500
A
750
A
1500
A
10400
W
10200
V
5100
V
−50 ~ +150
°C
−50 ~ +125
°C
−55 ~ +125
°C
10
μs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min Typ Max
I_CES
Collector cutoff current
V_CE = V_CES, V_GE = 0V
T_j = 25°C
—
— 24.0
mA
T_j = 125°C — 24.0 —
V_GE(th)
I_GES
Gate-emitter threshold voltage
Gate leakage current
V_CE = 10V, I_C = 75mA, T_j = 25°C
V_GE = V_GES, V_CE = 0V, T_j = 25°C
5.8 6.3 6.8
V
−0.5 —
0.5
μA
C_ies
Input capacitance
C_oes
Output capacitance
C_res
Reverse transfer capacitance
Q_G
Total gate charge
V_CE = 10V, V_GE = 0V, f = 100kHz
T_j = 25°C
V_CC = 3600V, I_C = 750A, V_GE = ±15V
— 136.0 —
nF
— 8.6 —
nF
— 4.0 —
nF
— 10.5 —
μC
V_CEsat
Collector-emitter saturation voltage
I_C = 750A
V_GE = 15V
(Note 4)
T_j = 25°C
— 3.90 —
V
T_j = 125°C — 4.80 5.60
t_d(on)
t_r
E_on(10%)
E_on
Turn-on delay time
Turn-on rise time
Turn-on switching energy (Note 5)
Turn-on switching energy (Note 6)
V_CC = 3600V
I_C = 750A
V_GE = ±15V
R_G(on) = 3.9Ω
L_s = 150nH
Inductive load
T_j = 25°C
— 1.20 —
μs
T_j = 125°C — 1.15 1.80
T_j = 25°C
— 0.20 —
μs
T_j = 125°C — 0.22 0.50
T_j = 25°C
— 3.50 —
J
T_j = 125°C — 4.10 —
T_j = 25°C
— 3.85 —
J
T_j = 125°C — 4.80 —
t_d(off)
t_f
E_off(10%)
E_off
Turn-off delay time
Turn-off fall time
Turn-off switching energy (Note 5)
Turn-off switching energy (Note 6)
V_CC = 3600V
I_C = 750A
V_GE = ±15V
R_G(off) = 33Ω
L_s = 150nH
Inductive load
T_j = 25°C
— 7.30 —
μs
T_j = 125°C — 7.80 9.00
T_j = 25°C
— 0.36 —
μs
T_j = 125°C — 0.44 1.00
T_j = 25°C
— 3.40 —
J
T_j = 125°C — 4.60 —
T_j = 25°C
— 3.60 —
J
T_j = 125°C — 4.90 —
June 2011
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