CM750HG-130R Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM750HG-130R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
Item
V_EC
t_rr
I_rr
Q_rr
E_rec(10%)
E_rec
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery current
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2)(Note 5)
Reverse recovery energy
(Note 2)(Note 6)
I_E = 750A
V_GE = 0V
V_CC = 3600V
I_C = 750A
V_GE = ±15V
R_G(on) = 3.9Ω
L_s = 150nH
Inductive load
Conditions
Limits
Unit
Min Typ Max
(Note 4) T_j = 25°C
— 3.00 —
V
T_j = 125°C — 3.20 3.80
T_j = 25°C
— 0.55 —
μs
T_j = 125°C — 0.75 —
T_j = 25°C
— 900 —
A
T_j = 125°C — 1000 —
T_j = 25°C
— 750 —
μC
T_j = 125°C — 1100 —
T_j = 25°C
— 1.05 —
J
T_j = 125°C — 1.85 —
T_j = 25°C
— 1.40 —
J
T_j = 125°C — 2.10 —
THERMAL CHARACTERISTICS
Symbol
Item
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Thermal resistance
Contact thermal resistance
Conditions
Limits
Unit
Min Typ Max
Junction to Case, IGBT part
—
— 12.0 K/kW
Junction to Case, FWDi part
—
· Case to heat sink, λ_grease = 1W/m k, D_(c-s) = 100μm
—
— 22.0 K/kW
6.0
— K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
M_s
M_t
m
CTI
d_a
d_s
L_{P CE}
R_{CC’+EE’}
r_g
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
Conditions
M : Main terminals screw
M : Mounting screw
M : Auxiliary terminals screw
Tc = 25°C
Tc = 25°C
Limits
Unit
Min Typ Max
7.0
— 22.0 N·m
3.0
—
6.0 N·m
1.0
—
3.0 N·m
—
1.4
—
kg
600 —
—
—
26.0 —
—
mm
56.0 —
—
mm
— 15.0 —
nH
— 0.18
—
mΩ
—
2.6
—
Ω
Note1. Pulse width and repetition rate should be such that junction temperature (T_j) does not exceed Topmax rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD_i).
3. Junction temperature (T_j) should not exceed T_jmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E_on(10%) / E_off(10%) / E_rec(10%) are the integral of 0.1V_CE x 0.1I_C x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
June 2011
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