CM750HG-130R Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM750HG-130R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
C_ies
100
10
C_oes
VGE = 0V, T_j = 25°C
C_res
f = 100kHz
1
0.1
1
10
100
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
14
VCC = 3600V, VGE = ±15V
RG(on) = 3.9Ω, RG(off) = 33Ω
12 LS = 150nH, Tj = 125°C
Inductive load
E_on
10
8
E_off
6
4
2
E_rec
0
0 250 500 750 1000 1250 1500
Collector Current [A]
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 3600V, IC = 750A
T_j = 25°C
15
10
5
0
-5
-10
-15
0
2
4
6
8 10 12
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
12
VCC = 3600V, IC = 750A
VGE = ±15V, L_S = 150nH
10 ^{Tj = 125°C, Inductive load}
8
6
E_on
4
2
E_rec
0
0
2
4
6
8
10
Gate resistor [Ohm]
June 2011
5