CM1200HG-90R_13 Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
12
VCC = 28 00 V, IC = 1 200 A
VG E = ±1 5V, L _S = 1 50n H
10 ^{Tj = 1 25°C, In ductive l oa d}
8
6
Eoff
4
2
0
0
5
10
15
20
Gate resistor [Ohm]
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
10 0
V_CC = 28 00 V, V_GE = ± 15V
R_G(on) = 2.7Ω, L_S = 150 nH
Tj = 1 25°C, In ductive l oa d
1 000 0
Irr
10
1 000
1
trr
1 00
0 .1
10 0
10 00
Emitter Current [A]
10
10000
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)HALF-BRIDGE
100
10
V_CC = 28 00 V, V_GE = ± 15V
R _G(on) = 2.7Ω, R_{G( off)} = 1 0Ω
L _S = 1 50n H, Tj = 1 25° C
In ductive l oa d
1
tf
td(off)
td(on )
0 .1
tr
0.01
100
1000
Collector Current [A]
1 00 00
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
30 00
25 00
VCC  32 00 V, VGE = ± 15V
Tj = 125 °C, RG(o ff) = 10 Ω
20 00
15 00
10 00
5 00
0
0
1000 2000 3000 4000 5000
Collector-Emitter Voltage [V]
December 2012 _(HVM-1056-E)
6