CM1200HG-90R_13 Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10 00
Ci es
1 00
10
Co es
VGE = 0V, Tj = 2 5° C
f = 10 0kHz
Cres
1
0. 1
1
10
1 00
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
16
VCC = 280 0V, VGE = ±1 5V
Eon
14
RG( on) = 2.7 Ω, R G(off ) = 10Ω
L_S = 15 0nH , Tj = 125 °C
Indu cti ve lo ad
12
10
Eo ff
8
6
4
Erec
2
0
0
500 1000 1500 2000 2500
Collector Current [A]
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 28 00V, IC = 1 200 A
Tj = 2 5° C
15
10
5
0
-5
-10
-15
0
5
10
15
20
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
12
VCC = 28 00V, IC = 1 200 A
VGE = ±1 5V, L _S = 1 50n H
10 Tj = 1 25°C, Ind uctive load
8
6
Eon
4
2
Ere c
0
0
1
2
3
4
5
Gate resistor [Ohm]
December 2012 _(HVM-1056-E)
5