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CM1200HG-90R_13 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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< HVIGBT MODULES >
CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HG-90R
ï¬ I 1200A C ································································
ï¬ V 4500V CES ··························································
ï¬ 1-element in a pack
ï¬ High Insulated type
ï¬ LPT-IGBT / Soft Recovery Diode
ï¬ AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
December 2012 HVM-1056-E
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