CM1200HG-90R_13 Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2 50 0
Tj = 25 °C
2 00 0
1 50 0
V_GE = 16V
V_GE = 1 5V
V_GE = 1 3V
V_GE = 11V
1 00 0
50 0
V_GE = 10V
0
0
2
4
6
8
Collector - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
25 00
VGE = 15 V
20 00
15 00
Tj = 25 °C
Tj = 1 25°C
10 00
5 00
0
0
2
4
6
8
Collector-Emitter Saturation Voltage [V]
TRANSFER CHARACTERISTICS
(TYPICAL)
2 50 0
V_CE = V_GE
2 00 0
1 50 0
1 00 0
50 0
Tj = 1 25°C
Tj = 2 5°C
0
0
4
8
12
16
Gate - Emi tter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
25 00
20 00
15 00
Tj = 25 °C
Tj = 1 25°C
10 00
5 00
0
0
1
2
3
4
5
Emitter-Collector Voltage [V]
December 2012 _(HVM-1056-E)
4