CM1000DXL-24S Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T _j =25 °C
2000
V_GE=20 V
1800
15 V
1600
13.5 V
(Chip)
12 V
1400
1200
11 V
1000
800
10 V
600
400
9V
200
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T _j =25 °C
10
(Chip)
8
I_C=2000 A
I_C=1000 A
6
I_C=400 A
4
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE V_GE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V_GE=15 V
3.5
(Chip)
3.0
T_j =150 °C
T_j =125 °C
2.5
2.0
1.5
T _j =25 °C
1.0
0.5
0.0
0
200 400 600 800 1000 1200 1400 1600 1800 2000
COLLECTOR CURRENT I_C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
10000
(Chip)
T_j =125 °C
1000
T_j =150 °C
100
T _j =25 °C
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE V_EC (V)
Publication Date : October 2011
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