CM1000DXL-24S Datasheet, PDF (5/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
52
VGE=15 V
61
1/2
Short- ^Cs1
C1
circuited
I_C
G1
Short- ⁵²
circuited
61
1/2
Short- ^Cs1
C1
circuited
I_E
G1
V
62
Short- ⁴²
circuited
46
32/33
Es1
Cs2
V_GE=15 V
G2
C2/E1
IC
V
62
Short- ⁴²
circuited
46
32/33
Es1
Short- ^Cs2
circuited
G2
C2/E1
IE
47
3/4
V
Es2
E2
47
3/4
V
Es2
E2
Tr1
Tr2
VCEsat test circuit
Di1
Di2
VEC test circuit
+V_GE
0V
-V_GE
i_E
v_GE
-V_GE
Load
0V
+ V_CC
i_C
R_G
v_CE vGE
i_C
0A
t_d(on)
t_r
t_{d ( of f )}
Switching characteristics test circuit and waveforms
90 %
0
t
90 %
10%
t_f
t
i_E
Q _rr =0.5×I _rr ×t_{r r}
I_E
0A
Irr
t _rr
t
0.5×I r r
trr, Qrr test waveform
I_CM
v_CE
i_C
V_CC
i_C
V_CC
I_CM
v_CE
i_E
I_EM
0A
v_EC
V_CC
t
0.1×I_CM
0
0.1×V_CC
t
0.1×V_CC
0
0.02×I_{CM t}
0V
t
t_i
t_i
t_i
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : October 2011
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