CM1000DXL-24S Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T_j=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
Item
Conditions
V_CES
V_GES
I_C
I_CRM
P_tot
I_E
I_ERM
(Note.1)
(Note.1)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
G-E short-circuited
C-E short-circuited
DC, T_C=124 °C ^{(Note.2, 4)}
Pulse, Repetitive ^(Note.3)
T_C=25 °C ^{(Note.2, 4)}
DC, T_C=25 °C ^{(Note.2, 4)}
Pulse, Repetitive ^(Note.3)
MODULE
Symbol
Item
Conditions
T_jmax
T_Cmax
Maximum junction temperature
Maximum case temperature
-
(Note.2)
T_jop
Operating junction temperature
-
T_stg
Storage temperature
-
V_isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Rating
Unit
1200
V
± 20
V
900 *
A
2000
7500
W
900 *
A
2000
Rating
Unit
175
°C
125
-40 ~ +150
°C
-40 ~ +125
2500
V
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I_CES
I_GES
V_GE(th)
V_CEsat
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
V_CE=V_CES, G-E short-circuited
-
V_GE=V_GES, C-E short-circuited
-
I_C=100 mA, V_CE=10 V
5.4
I_C=1000 A , ^(Note.5)
T _j =25 °C
-
V_GE=15 V,
T _j =125 °C
-
( Terminal)
T _j =150 °C
-
I_C=1000 A , ^(Note.5)
T _j =25 °C
-
V_GE=15 V,
T _j =125 °C
-
(Chip)
T _j =150 °C
-
-
1
mA
-
0.5
μA
6.0
6.6
V
1.85
2.30
2.05
-
V
2.10
-
1.70
2.15
1.90
-
V
1.95
-
C_ies
C_oes
C_res
Input capacitance
Output capacitance
Reverse transfer capacitance
V_CE=10 V, G-E short-circuited
-
-
100
-
-
20
nF
-
-
1.7
Q_G
t_d(on)
t_r
t_d(off)
t_f
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_CC=600 V, I_C=1000 A, V_GE=15 V
-
V_CC=600 V, I_C=1000 A, V_GE=±15 V,
-
-
R_G=0 Ω, Inductive load
-
-
I_E=1000 A , ^(Note.5)
G-E short-circuited,
T _j =25 °C
-
T _j =125 °C
-
2300
-
nC
-
800
-
200
ns
-
600
-
300
1.85
2.30
1.85
-
V
V (Note.1)
EC
Emitter-collector voltage
(Terminal)
I_E=1000 A , ^(Note.5)
G-E short-circuited,
T _j =150 °C
-
T _j =25 °C
-
T _j =125 °C
-
1.85
-
1.70
2.15
1.70
-
V
t (Note.1)
rr
Q (Note.1)
rr
Reverse recovery time
Reverse recovery charge
(Chip)
T _j =150 °C
-
V_CC=600 V, I_E=1000 A, V_GE=±15 V,
-
R_G=0 Ω, Inductive load
-
1.70
-
-
300
ns
53.3
-
μC
E_on
E_off
E ^(Note.1)
rr
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
V_CC=600 V, I_C=I_E=1000 A,
V_GE=±15 V, R_G=0 Ω, T _j =150 °C,
Inductive load
-
45.6
-
mJ
-
97.1
-
-
96.7
-
mJ
R_CC'+EE'
r_g
Internal lead resistance
Internal gate resistance
Main terminals-chip, per switch,
T_C=25 °C ^(Note.2)
Per switch
-
-
0.5
mΩ
-
2.0
-
Ω
Publication Date : October 2011
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