CM1000DXL-24S Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T _j =25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol
Item
Conditions
R₂₅
ΔR/R
B_(25/50)
P₂₅
Zero-power resistance
Deviation of resistance
B-constant
Power dissipation
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
T_C=25 °C ^(Note.2)
T_C=100 °C, R₁₀₀=493 Ω
Approximate by equation
T_C=25 °C ^(Note.2)
(Note.6)
Conditions
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Thermal resistance ^(Note.2)
Contact thermal resistance ^(Note.2)
Junction to case, per Inverter IGBT
Junction to case, per Inverter FWDi
Case to heat sink, per 1 module,
Thermal grease applied ^(Note.7)
Limits
Unit
Min.
Typ.
Max.
4.85
5.00
5.15
kΩ
-7.3
-
+7.8
%
-
3375
-
K
-
-
10
mW
Limits
Unit
Min.
Typ.
Max.
-
-
20
K/kW
-
-
38
K/kW
-
7
-
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
M_t
Mounting torque
M_s
d_s
Creepage distance
Main terminals
Mounting to heat sink
Terminal to terminal
Terminal to base plate
M 6 screw
M 5 screw
3.5
4.0
2.5
3.0
13.2
-
15.3
-
4.5
N·m
3.5
N·m
-
mm
-
d_a
Clearance
Terminal to terminal
Terminal to base plate
13.2
-
14.8
-
-
mm
-
m
Weight
e_c
Flatness of base plate
-
On the centerline X, Y ^(Note.8)
-
690
-
g
±0
-
+100
μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
2. Case temperature (T_C) and heat sink temperature (T _s ) are defined on the each surface (mounting side) of base plate and heat sink just under
the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
3. Pulse width and repetition rate should be such that the device junction temperature (T _j ) dose not exceed T _{j m a x} rating.
4. Junction temperature (T _j ) should not increase beyond T _{j m a x} rating.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
6. B_{(25 / 50)}

ln(
R ₂₅
R₅₀
)
/(
1
T₂₅

1
T₅₀
)
R₂₅: resistance at absolute temperature T₂₅ [K]; T₂₅=25 [°C]+273.15=298.15 [K]
R₅₀: resistance at absolute temperature T₅₀ [K]; T₅₀=50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
X
mounting side
Label side
mounting side
Y
mounting side
-: Concave
+: Convex
Publication Date : October 2011
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