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CM75RL-12NF Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE
◁
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7 Conditions:
5 VCC = 300V
VGE = ±15V
3 RG = 8.3Ω
2 Tj = 25°C
Inductive load
102
7
5
trr
3
Irr
2
101100 2 3 5 7 101 2 3 5 7 102
EMITTER CURRENT IE (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
101
7 Conditions:
VCC = 300V
5 VGE = ±15V
3 RG = 8.3Ω
2
Tj = 125°C
Inductive load
C snubber at bus
100
7
5
Esw(off)
3
Esw(on)
2
10–11 00 2 3 5 7 101 2 3 5 7 102
COLLECTOR CURRENT IC (A)
RECOVERY LOSS vs. IE
(TYPICAL)
100
7
5
3
2
Err
10–1
7
5
Conditions:
VCC = 300V
VGE = ±15V
3 RG = 8.3Ω
2
Tj = 125°C
Inductive load
C snubber at bus
10–12 00 2 3 5 7 101
23
5 7 102
EMITTER CURRENT IE (A)
MITSUBISHI IGBT MODULES
CM75RL-12NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
100
7
Single Pulse,
5
TC = 25°C
3
Under the chip
2
10–1
7
5
10–1
7
5
3
3
2
2
IGBT part:
10–2 Per unit base =
7
5
Rth(j–c) = 0.29°C/W
10–2
7
5
FWDi part:
3
2
Per unit base =
Rth(j–c) = 0.51°C/W
3
2
10–3
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
102
Conditions:
7 VCC = 300V
5 VGE = ±15V
3 IC = 75A
Tj = 125°C
2 Inductive load
C snubber at bus
101
7
5
Esw(off)
3
2
100
100
Esw(on)
2 3 5 7 101
23
5 7 102
GATE RESISTANCE RG (Ω)
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
100
7
Err
5
3
2
10–1
7
5
Conditions:
VCC = 300V
VGE = ±15V
3 IE = 75A
2
Tj = 125°C
Inductive load
C snubber at bus
10–12 00 2 3 5 7 101
23
5 7 102
GATE RESISTANCE RG (Ω)
Jun. 2004
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